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n-Channel Power MOSFET
OptiMOSTM BSF030NE2LQ
Data Sheet
2.0, 2011-03-18 Final
Industrial & Multimarket
OptiMOSTM Power-MOSFET BSF030NE2LQ
1
Description
OptiMOSTM25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOSTM 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOSTM products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOSTM products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Features * * * * * * * * * * Optimized for high performance buck converters 100% avalanche tested Low parasitic inductance Qualified according to JEDEC1) for target applications Low profile (<0.7 mm) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double-sided cooling Compatible with DirectFET(R) package SQ footprint and outline2) 100% Rg Tested
Applications * * * * On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Key Performance Parameters Value 25 3 75 13 23 Unit V m A nC Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools
Table 1 Parameter
VDS
RDS(on),max
ID
QOSS Qg.typ
Type BSF030NE2LQ
Package MG-WDSON-2
Marking 03E2
1) J-STD20 and JESD22 2) CanPAK uses DirectFET (R) technology licensed from International Rectifier Corporation. DirectFET (R) is a registered trademark of International Rectifier Corporation.
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
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Maximum ratings
at Tj = 25 C, unless otherwise specified. Table 2 Parameter Continuous drain current Maximum ratings Symbol Min. ID Pulsed drain current2) Avalanche current, single pulse Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
3)
Values Typ. Max. 75 47 24 300 40 50 20 28 2.2 150 -
Unit A
Note / Test Condition VGS=10 V, TC=25 C VGS=10 V, TC=100 C VGS=10 V, TA=25 C, RthJA=45 K/W1)) TC=25 C
ID,pulse IAS EAS VGS Ptot Tj,Tstg
-20 -40 -
mJ V W C Ncm
ID=35 A,RGS=25 TC=25 C TA=25 C, RthJA=58 K/W
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
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Table 3 Parameter
Thermal characteristics
Thermal characteristics Symbol Min. Values Typ. 1.0 Max. 4.5 58 K/W Unit Note / Test Condition bottom top 6 cm2 cooling area1)
Thermal resistance, junction - case RthJC Device on PCB
RthJA
1) See figure 13 for more detailed information
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics
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Electrical characteristics
Electrical characteristics, at Tj=25 C, unless otherwise specified. Table 4 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 25 1 Gate-source leakage current 0.1 10 10 3.3 2.5 0.6 110 Values Typ. Max. 2.2 10 100 100 4.1 3 S |VDS|>2|ID|RDS(on)max, ID=30 A nA m A V Unit Note / Test Condition
VGS=0 V, ID=1.0 mA VDS=VGS, ID=250 A VDS=25 V, VGS=0 V, Tj=25 C VDS=25 V, VGS=0 V, Tj=125 C VGS=20 V, VDS=0 V VGS=4.5 V, ID=30A VGS=10 V, ID=30 A
VGS(th) IDSS
IGSS
55
Drain-source on-state resistance RDS(on) Gate resistance Transconductance
RG
gfs
Table 5 Parameter
Dynamic characteristics Symbol Min. Values Typ. 1700 660 72 2.8 3.4 18 2.6 Max. ns pF Unit Note / Test Condition
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Ciss Coss
Crss
VGS=0 V, VDS=12 V, f=1 MHz VDD=12V, VGS=10 V, ID=30 A, RG= 1.6
td(on) tr td(off) tf
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics
Table 6 Parameter
Gate charge characteristics1) Symbol Min. Values Typ. 4.4 2.7 2.7 4.3 11.3 2.6 23 Max. V nC nC Unit Note / Test Condition
Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total
Qgs
Qg(th)
Qgd
Qsw
VDD=12 V, ID=30 A, VGS=0 to 4.5 V
Qg Vplateau Qg
VDD=12 V, ID=30 A, VGS=0 to 10V VDS=0.1 V, VGS=0 to 4.5 V VDD=12 V, VGS=0 V
Gate charge total, sync. FET Output charge
Qg(sync) Qoss
-
9.8 13
-
1) See figure 16 for gate charge parameter definition
Table 7 Parameter
Reverse diode characteristics Symbol Min. Is IS,pulse 0.86 10 Values Typ. Max. 28 112 1 V nC A Unit Note / Test Condition
Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery charge
TC=25 C VGS=0 V, IF=30 A, Tj=25 C VR=15 V, IF=Is,
diF/dt=400 A/s
VSD Qrr
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics diagrams
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Electrical characteristics diagrams
Table 8 1 Power dissipation 2 Drain current
Ptot = f(TC)
Table 9 3 Safe operating area TC=25 C
ID=f(TC); parameter:VGS
4 Max. transient thermal impedance
ID=f(VDS); Tj=25 C; D=0; parameter: Tp
Z(thJC)=f(tp); parameter: D=tp/T
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 C 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 C; parameter: VGS Table 11 7 Typ. transfer characteristics
RDS(on)=f(ID); Tj=25 C; parameter: VGS
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 C
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V Table 13 11 Typ. capacitances
VGS(th)=f(Tj); VGS=VDS; ID=250 A
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ; parameter: Tj(start) Table 15 15 Drain-source breakdown voltage
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Package outlines
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Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
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OptiMOSTM Power-MOSFET BSF030NE2LQ
Package outlines
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Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches 10 2.0, 2011-03-18
Final Data Sheet
OptiMOSTM Power-MOSFET BSF030NE2LQ
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
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2.0, 2011-03-18
OptiMOSTM Power-MOSFET BSF030NE2LQ
Revision History
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Revision History
Revision History: 2011-03-18, 2.0 Previous Revision: Revision 0.4 2.0 Subjects (major changes since last revision) Release of target data sheet Release Final version
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2011-03-18 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
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2.0, 2011-03-18

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